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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor DESCRIPTION *Built-in Base-Emitter Shunt Resistors *High DC current gainhFE = 750 (Min) @ IC = 6A *Collector-Emitter Sustaining VoltageVCEO(SUS)= 100V(Min) *Complement to type 2N6052 APPLICATIONS *Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL VCBO VCEO VEBO IC ICM IB PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE 100 100 5 UNIT V V V 2N6059 Collector Current -Continuous Collector Current-Peak Base Current Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature ww w PARAMETER scs .i 12 20 0.2 150 200 -65~200 A A A .cn mi e W THERMAL CHARACTERISTICS SYMBOL Rth j-c MAX 1.17 UNIT /W ThermalResistance, Junction to Case isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2N6059 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0 100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 24mA 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A; IB= 120mA 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 12A; IB= 120mA 4.0 V VBE(on) Base-Emitter On voltage IC= 6A ; VCE= 3V 2.8 V ICEO Collector Cutoff current VCE= -50V; IB= 0 ICEX Collector Cutoff current IEBO Emitter Cut-off current hFE-1 DC Current Gain hFE-2 DC Current Gain COB Output Capacitance w w scs .i w VCE= 100V;VBE(off)= -1.5V VCE= 100V;VBE(off)= -1.5V,TC=150 VEB= 5V; IC= 0 IC= 6A ; VCE= 3V .cn mi e 1.0 0.5 5.0 2.0 mA mA mA 750 18000 IC= 12A ; VCE= 3V 100 IE=0 ; VCB= 10V;ftest= 0.1MHz 300 pF isc Websitewww.iscsemi.cn 2 |
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